A new generation of circuit breakers is becoming the future backbone of the United States’ energy transition.
AOS pairs its aMOS E2 high-voltage MOSFET platform with the top-side cooled GTPAK package, targeting power supplies, solar inverters, and industrial systems.
This 4th-generation IC family minimizes no-load consumption and simplifies safety compliance for consumer and industrial AC-DC power supplies without increasing design complexity.
Nanopower Semiconductor’s power-saving IC manages sensors and peripherals while keeping the host MCU off, with an idle current of just 200 nA.
The release of 2200 V PowiGaN technology marks the next major step in high-voltage GaN power conversion. Power supply engineers grappling with the challenge of higher power density in EVs, AI data centers, BESS, and photovoltaic converters (among others) will be able to stop designing around the voltage-limit problem inherent in conventional GaN switches.
Sign-up and receive our weekly updates including the latest news and technical articles.
Infineon, Skeleton, Vicor, the University of Birmingham, EPRI, and the Department of Energy are developing technologies for AI data centers, power supplies, fusion energy, and grid reliability.
By embedding heterogeneous Si, SiC, and GaN die directly into 12-inch silicon wafers with precision RDLs, Onsemi's EPP replaces wire bonds and mold compounds to deliver up to 5x power density.
The RP50-AW and RP100-FW series pair ultra-wide input-voltage flexibility with compact footprints and operating temperatures up to 110°C.
Facebook
Google
GitHub
Linkedin
